发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 Suppressed is damage of a semiconductor wafer due to charging of a cleaning liquid used in a single wafer type wafer cleaning step.;A chemical solution discharged from a tip of a cleaning nozzle is brought into contact with protrusions of wafer chucks to thereby let static electricity of the chemical solution go to the wafer chucks, and subsequently, the cleaning nozzle is moved above the wafer to supply the chemical solution onto a top surface of the wafer, thereby suppressing abnormal discharge (damage) of the wafer due to charging of the chemical solution.
申请公布号 US2016133487(A1) 申请公布日期 2016.05.12
申请号 US201614997565 申请日期 2016.01.17
申请人 Renesas Electronics Corporation 发明人 KANAMITSU Kenji;KOGA Takuya;ANABUKI Kazutoshi
分类号 H01L21/67;B08B3/08;B08B3/10;H01L21/02;H01L21/687 主分类号 H01L21/67
代理机构 代理人
主权项
地址 Tokyo JP