| 发明名称 |
METHOD OF MANUFACTURING A SILICON INGOT AND SILICON INGOT |
| 摘要 |
A method of Czochralski growth of a silicon ingot includes melting a mixture of silicon material and an n-type dopant material in a crucible. The silicon ingot is extracted from the molten silicon during an extraction time period. The silicon ingot is doped with additional n-type dopant material during at least one sub-period of the extraction time period. |
| 申请公布号 |
US2016130722(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201414535416 |
申请日期 |
2014.11.07 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Caspary Nico;Schulze Hans-Joachim |
| 分类号 |
C30B15/04;C30B29/06;C01B33/02;C30B31/06 |
主分类号 |
C30B15/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of Czochralski growth of a silicon ingot, the method comprising:
melting a mixture of silicon material and an n-type dopant material in a crucible; extracting the silicon ingot from the molten silicon during an extraction time period; and doping the silicon ingot with additional n-type dopant material during at least one sub-period of the extraction time period. |
| 地址 |
Neubiberg DE |
