METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR, THIN-FILM TRANSISTOR, AND DISPLAY PANEL

摘要

Provided are a method for manufacturing a thin-film transistor by which it is possible to shorten the manufacturing process, a thin-film transistor, and a display panel provided with a thin-film transistor. The method for manufacturing a thin-film transistor includes: a step for forming a gate electrode on the surface of a substrate; a step for forming an insulating film on the surface of the substrate on which the gate electrode was formed; a step for forming a first amorphous silicon layer on the surface of the substrate on which the insulating film was formed; an annealing step for irradiating a plurality of separated required locations on the first amorphous silicon layer with an energy beam and causing the required locations to change to a polysilicon layer; a step for covering the polysilicon layer and forming a second amorphous silicon layer; a step for forming an n+ silicon layer on the surface of the second amorphous silicon layer; and a step for etching the first amorphous silicon layer, the second amorphous silicon layer, and the n+ silicon layer.