| 摘要 |
Disclosed are a silicon-based film and a composition, and a method for forming the same. The silicon-based film contains silicon less than 50 atomic%. In an embodiment of the present invention, the silicon-based film has a composition of Si_xC_yN_z, wherein x is 0-55, y is 35-100, and z is 0-50 atomic wt% in the case of measuring with XPS. In other embodiments of the present invention, the silicon-based film is deposited using at least one organosilicon precursor including two silicon atoms like 1, 4-disilapentane, at least one Si-Me group, and an ethylene or propylene linkage between the silicon atoms. |
