| 发明名称 |
SCRIBE SEALS AND METHODS OF MAKING |
| 摘要 |
A semiconductor die includes a plurality of layers, the plurality of layers having a top surface. A scribe seal is located in the plurality of layers and includes a first metal stack having a first metal layer located proximate the top surface. A trench is located in at least one layer of the plurality of layers. The trench extends from the top surface of the plurality of layers and is located a distance from the first metal stack. An electrical insulating layer is located on the top surface. The electrical insulating layer covers at least a portion of the top surface adjacent the first metal layer and extends a distance from the top surface of the first metal layer. |
| 申请公布号 |
US2016133580(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201514854896 |
申请日期 |
2015.09.15 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Bonifield Thomas D.;West Jeffrey A.;Williams Byron;Guo Honglin |
| 分类号 |
H01L23/00;H01L23/58 |
主分类号 |
H01L23/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor die comprising:
a plurality of layers, the plurality of layers having a top surface; a scribe seal located in the plurality of layers, the scribe seal including a first metal stack having a first metal layer located proximate the top surface; a trench located in at least one layer of the plurality of layers, the trench extending from the top surface of the plurality of layers and located a distance from the first metal stack; and an electrical insulating layer located on the top surface, the electrical insulating layer covering at least a portion of the top surface adjacent the first metal layer and extending a distance from the top surface of the first metal layer. |
| 地址 |
Dallas TX US |
