METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing an SGT capable of obtaining a structure allowing for lower resistance of a source, a drain, and a gate, a desired gate length, source and drain shapes, and a diameter of a columnar semiconductor.SOLUTION: A method for manufacturing a semiconductor device includes steps of: forming a columnar semiconductor layer of a first conductivity type; forming a semiconductor layer of a second conductivity type in the lower part of the columnar semiconductor layer of the first conductivity type; forming a dummy gate insulating film and a dummy gate electrode around the columnar semiconductor layer of the first conductivity type; forming a first insulating film in the upper part of the gate and in an upper sidewall of the columnar semiconductor layer of the first conductivity type via the gate insulating film; forming a first insulating film in a sidewall of the gate; forming a semiconductor layer of a second conductivity type in the upper part of the columnar semiconductor layer of the first conductivity type; forming a metal-semiconductor compound in the semiconductor layer of the second conductivity type formed in the upper and lower parts of the columnar semiconductor layer of the first conductivity type and in the gate; and forming a gate insulating film and a metal gate electrode by removing the dummy gate insulating film and the dummy gate electrode.SELECTED DRAWING: Figure 47(b)