| 摘要 |
PROBLEM TO BE SOLVED: To prevent decomposition and consumption, by protecting the members in a chamber.SOLUTION: A plasma processing method includes a deposition step, a plasma processing step, and a removal step. The deposition step deposits a silicon-containing film on the surface of a member in a chamber, by the plasma of silicon-containing gas and reductive gas. The plasma processing step performs plasma processing of a processed object carried in the chamber by the plasma of process gas, after a silicon-containing film is formed on the surface of a member. The removal step removes the silicon-containing film from the surface of a member by the plasma of fluorine-containing gas, after the object subjected to plasma processing is carried out of the chamber.SELECTED DRAWING: Figure 2 |
