| 发明名称 |
THIN FILM TRANSISTOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND LIQUID CRYSTAL DISPLAY PANEL HAVING THE SAME |
| 摘要 |
A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain on the first insulating layer, a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain, an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source, a second insulating layer on the drain, the source, and the active layer, and a top gate on the second insulating layer. |
| 申请公布号 |
US2016133754(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201514661470 |
申请日期 |
2015.03.18 |
| 申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
MOON Yeon Keon;KANO Masataka;YANG Sung-Hoon;LIM Ji Hun;KOO So Young;KIM Myoung Hwa;LIM Jun Hyung |
| 分类号 |
H01L29/786;G02F1/1368;H01L29/66 |
主分类号 |
H01L29/786 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film transistor substrate, comprising:
a substrate; a bottom gate on the substrate; a first insulating layer on the substrate and on the bottom gate; a drain on the first insulating layer; a source on the first insulating layer, the source including a first source at a first side of the drain and a second source at a second side of the drain; an active layer on the first insulating layer, the active layer including a first active layer contacting the drain and the first source and a second active layer contacting the drain and the second source; a second insulating layer on the drain, the source, and the active layer; and a top gate on the second insulating layer. |
| 地址 |
Yongin-City KR |
