SILICON CARBIDE STATIC INDUCTION TRANSISTOR AND PROCESS FOR MAKING A SILICON CARBIDE STATIC INDUCTION TRANSISTOR

摘要

A static induction transistor is formed on a silicon carbide substrate doped with a first conductivity type. First recessed regions in a top surface of the silicon carbide substrate are filled with epitaxially grown gate regions in situ doped with a second conductivity type. Epitaxially grown channel regions in situ doped with the first conductivity type are positioned between adjacent epitaxial gate regions. Epitaxially grown source regions in situ doped with the first conductivity type are positioned on the epitaxial channel regions. The bottom surface of the silicon carbide substrate includes second recessed regions vertically aligned with the channel regions and silicided to support formation of the drain contact. The top surfaces of the source regions are silicided to support formation of the source contact. A gate lead is epitaxially grown and electrically coupled to the gate regions, with the gate lead silicided to support formation of the gate contact.

主权项

1. A static induction transistor (SIT), comprising:
a silicon carbide substrate doped with a first conductivity type and including a plurality of first recessed regions in a top surface of the silicon carbide substrate; a plurality of epitaxial gate regions within the first recessed regions having an in situ second conductivity type dopant; a plurality of epitaxial channel regions positioned between adjacent epitaxial gate regions having an in situ first conductivity type dopant; and a plurality of epitaxial source regions on said plurality of epitaxial channel regions having an in situ first conductivity type dopant.