| 发明名称 |
CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME |
| 摘要 |
A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled gap that includes a buried void. In addition, adjacent memory cell pillars include storage material elements that are at least partially interposed by the buried void. |
| 申请公布号 |
US2016133671(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201414535731 |
申请日期 |
2014.11.07 |
| 申请人 |
Micron Technology, Inc. |
发明人 |
Fantini Paolo;Casellato Cristina;Pellizzer Fabio |
| 分类号 |
H01L27/24;H01L45/00 |
主分类号 |
H01L27/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device, comprising
a plurality of variable resistance memory cell pillars, —wherein adjacent memory cell pillars are separated by a partially filled gap that includes a buried void, and —wherein the adjacent memory cell pillars include storage material elements that are at least partially interposed by the buried void. |
| 地址 |
Boise ID US |
