发明名称 |
METHOD FOR ION IMPLANTATION |
摘要 |
A method for an ion implantation is provided. First, a non-parallel ion beam is provided. Thereafter, a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively. Particularly, when at least one three-dimensional structure is located on the upper surface of the workpiece, both the top surface and the side surface of the three-dimensional structure may be implanted properly by the non-parallel ion beam when the workpiece is moved across the non-parallel ion beam one and only one times. Herein, the non-parallel ion beam can be a divergent ion beam or a convergent ion beam (both may be viewed as the integrated divergent beam), also can be generated directly from an ion source or is modified from a parallel ion beam, a divergent ion beam or a convergent ion beam. |
申请公布号 |
US2016133469(A1) |
申请公布日期 |
2016.05.12 |
申请号 |
US201514752522 |
申请日期 |
2015.06.26 |
申请人 |
ADVANCED ION BEAM TECHNOLOGY, INC. |
发明人 |
WAN Zhimin;SAADATMAND Kourosh;PLATOW Wilhelm P.;LIN Ger-Pin;LI Ching-I;PADMANABHA Rekha;CAI Gary N. |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
1. A method for an ion implantation, comprising:
providing a non-parallel ion beam; and generating a relative motion between a workpiece and the non-parallel ion beam, so as to enable each region of the workpiece to be implanted by different portions of the non-parallel ion beam successively; wherein the non-parallel ion beam is a divergent ion beam or a convergent ion beam. |
地址 |
Hsinchu TW |