| 发明名称 |
HIGH ENERGY ION IMPLANTER, BEAM CURRENT ADJUSTER, AND BEAM CURRENT ADJUSTMENT METHOD |
| 摘要 |
A beam current adjuster for an ion implanter includes a variable aperture device which is disposed at an ion beam focus point or a vicinity thereof. The variable aperture device is configured to adjust an ion beam width in a direction perpendicular to an ion beam focusing direction at the focus point in order to control an implanting beam current. The variable aperture device may be disposed immediately downstream of a mass analysis slit. The beam current adjuster may be provided with a high energy ion implanter including a high energy multistage linear acceleration unit. |
| 申请公布号 |
US2016133439(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201614996032 |
申请日期 |
2016.01.14 |
| 申请人 |
Sumitomo Heavy Industries Ion Technology Co., Ltd. |
发明人 |
Inada Kouji;Kato Kouji |
| 分类号 |
H01J37/304;H01J37/04;H01J37/317 |
主分类号 |
H01J37/304 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A beam current adjuster for an ion implanter comprising:
a variable aperture device disposed at a focus point of an ion beam or a vicinity thereof to adjust a beam width of the ion beam in a direction perpendicular to a focusing direction of the ion beam at the focus point in order to control an implanting beam current. |
| 地址 |
Tokyo JP |
