CHARGED PARTICLE BEAM EXPOSURE APPARATUS SUITABLE FOR DRAWING ON LINE PATTERNS, AND EXPOSURE METHOD USING THE SAME

摘要

There is provided a charged particle beam exposure apparatus which turns an array beam including a plurality of charged particle beams, being arranged side by side in a line in a direction intersecting line patterns, on and off at predetermined blanking timing, and thus performs irradiation when irradiated positions of the charged particle beams arrive at pattern positions. The charged particle beam exposure apparatus improves data processing control by segmenting a sample provided with line patterns into a plurality of exposure ranges each at a predetermined length in a direction of movement, and performing on-off control of the beams based on a point of time when the array beam passes on a reference position set in the exposure region.

主权项

1. A charged particle beam exposure apparatus configured to irradiate a substrate including a plurality of line patterns with a charged particle beam and to perform exposure of a pattern on any of the line patterns, comprising:
a stage unit capable of holding the substrate and moving the substrate at least in an extending direction of the line patterns; a column unit configured to generate an array beam including a plurality of charged particle beams, a blanker array included in the column unit and configured to turn each charged particle beam included in the array beam on or off based on a blanking operation signal; and an exposure control unit configured to control a position of the array beam in such a way as to retain the charged particle beams on the line patterns, and to control the blanker array in such a way as to turn each charged particle beam on and off at timing when the charged particle beam arrives at a pattern formation position.