| 发明名称 |
REDUCING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICES |
| 摘要 |
A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals. |
| 申请公布号 |
US2016133710(A9) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201314651012 |
申请日期 |
2013.12.11 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
Lu Bin;Matioli Alison de Nazareth;Palacios Tomas Apostol |
| 分类号 |
H01L29/267;H01L21/306;H01L29/78;H01L29/06;H01L29/20;H01L21/02;H01L29/10 |
主分类号 |
H01L29/267 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a first semiconductor region comprising silicon; a second semiconductor region comprising a nitride semiconductor material, the second semiconductor region being formed over the first semiconductor region; and a current blocking structure formed in the first semiconductor region between first and second terminals of the semiconductor device, the current blocking structure being configured to reduce current flow in the first semiconductor region between the first and second terminals. |
| 地址 |
Cambridge MA US |
