| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication method of a field effect transistor, facilitating the wiring formation and the formation of a semiconductor layer by inkjet printing.SOLUTION: A fabrication method of a bottom-contact type field effect transistor includes the steps of: forming a lyophilic/lyophobic pattern having a lyophilic portion and a lyophobic portion on a gate insulation film or a base material; printing a conductive ink to the lyophilic portion by inkjet printing to form a source/drain electrode; and forming a semiconductor layer by inkjet printing on the source/drain electrode. In the source/drain electrode, the width of a channel portion is 20 μm or less, the channel portion has a comb shape, and the width of the source/drain electrode is 20-50 μm.SELECTED DRAWING: Figure 1 |
