| 摘要 |
PROBLEM TO BE SOLVED: To provide a measuring method capable of stably and accurately measuring the DPM at lower cost.SOLUTION: Provided is a measuring method of distance between the lower end surface of a heat-shielding member and the surface of raw material melt in pulling of a silicon single crystal using the Czochralski method, in which: before pulling of the silicon single crystal, a tool having a virtual surface of the raw material melt is provided, a position of a mirror image of a reference reflector reflected on the virtual surface of the raw material melt is measured, and a relationship between the distance between the mirror image and the reference reflector and the distance between the lower end surface of the heat-shielding member and the virtual surface of the raw material melt, is obtained; and during pulling of the silicon single crystal, a position of the mirror image of the reference reflector reflected on the surface of the raw material melt is measured, and on the basis of the relationship between the distance between the mirror image of the reference reflector and the reference reflector and the distance between the lower end surface of the heat-shielding member and the virtual surface of the raw material melt, the distance between the lower end surface of the heat-shielding member and the surface of the raw material melt is calculated.SELECTED DRAWING: Figure 1 |
