HIGH ELECTRON MOBILITY TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A high electron mobility transistor is realized in the present invention by a gate recessed structure, a high permittivity oxide layer and a nitride-based interfacial passivation layer, featuring high threshold voltage, high transconductance, highly stable drain output current, and high reliability.

主权项

1. A high electron mobility transistor comprising:
a substrate; a channel layer formed on said substrate and including a first group III-V compound; a donor supply layer formed on said channel layer, including a second group III-V compound that is different from said first group III-V compound, and having a recess exposing a portion of said channel layer; a source structure formed on said donor supply layer and having an ohmic contact with said donor supply layer; a drain structure formed on said donor supply layer and having an ohmic contact with said donor supply layer, wherein said source structure and said drain structure are respectively disposed at opposite sides of said recess; an interfacial passivation layer formed on an inner surface of said recess; a dielectric layer formed on said interfacial passivation layer; and a gate structure formed on said dielectric layer and corresponding to said recess.