IMAGING DEVICE AND ELECTRONIC DEVICE

摘要

To provide an imaging device capable of obtaining high-quality imaging data. The imaging device includes a first circuit and a second circuit. The first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor. The second circuit includes an eighth transistor. The imaging device can compensate variation in threshold voltage of an amplifier transistor included in the first circuit.

主权项

1. An imaging device comprising:
a first circuit; and a second circuit, wherein the first circuit includes a photoelectric conversion element, a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, a first capacitor, a second capacitor, and a third capacitor, wherein the second circuit includes an eighth transistor, wherein one terminal of the photoelectric conversion element is electrically connected to one of a source and a drain of the first transistor, wherein the other of the source and the drain of the first transistor is electrically connected to one of a source and a drain of the second transistor, wherein the other of the source and the drain of the first transistor is electrically connected to one terminal of the first capacitor, wherein one of a source and a drain of the third transistor is electrically connected to the other terminal of the first capacitor; wherein the other terminal of the first capacitor is electrically connected to one terminal of the second capacitor, wherein one of a source and a drain of the fourth transistor is electrically connected to the other terminal of the second capacitor, wherein the other of the source and the drain of the fourth transistor is electrically connected to one of a source and a drain of the fifth transistor, wherein one of a source and a drain of the sixth transistor is electrically connected to one of a source and a drain of the fifth transistor, wherein one terminal of the third capacitor is electrically connected to the other terminal of the second capacitor, wherein the other terminal of the third capacitor is electrically connected to the other of the source and the drain of the sixth transistor, wherein a gate of the sixth transistor is electrically connected to the one terminal of the third capacitor, wherein one of a source and a drain of the seventh transistor is electrically connected to the other of the source and the drain of the sixth transistor, wherein the other of the source and the drain of the seventh transistor is electrically connected to one of a source and a drain of the eighth transistor, and wherein the photoelectric conversion element contains selenium in a photoelectric conversion layer.