| 发明名称 |
DISTURB CONDITION DETECTION FOR A RESISTIVE RANDOM ACCESS MEMORY |
| 摘要 |
A data storage device includes a memory die. The memory die includes a resistive random access memory (ReRAM) having a first portion and a second portion that is adjacent to the first portion. A method includes determining whether to access the second portion of the ReRAM in response to initiating a first operation targeting the first portion of the ReRAM. The method further includes initiating a second operation that senses information stored at the second portion to generate sensed information in response to determining to access the second portion. The method further includes initiating a third operation to rewrite the information at the ReRAM in response to detecting an indication of a disturb condition based on the sensed information. |
| 申请公布号 |
US2016133322(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201414538172 |
申请日期 |
2014.11.11 |
| 申请人 |
Sandisk Technologies Inc. |
发明人 |
ZAMIR Ran;SHARON Eran;ALROD Idan;NAVON Ariel;LIU Tz-Yi;YAN Tianhong |
| 分类号 |
G11C13/00;G06F7/58 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
at a data storage device that includes a memory die, wherein the memory die includes a resistive random access memory (ReRAM), performing:
in response to initiating a first operation targeting a first portion of the ReRAM, determining whether to access a second portion of the ReRAM, wherein the second portion is adjacent to the first portion;in response to determining to access the second portion, initiating a second operation that senses information stored at the second portion to generate sensed information; andin response to detecting an indication of a disturb condition based on the sensed information, initiating a third operation to rewrite the information at the ReRAM. |
| 地址 |
Plano TX US |
