发明名称 POWER SUPPLY AND PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a power supply in which an n-channel MOS FET does not generate heat excessively even if a sufficient voltage is not applied between a gate and a source of the FET, and a program.SOLUTION: The power supply includes: a power source which applies a DC power supply voltage; the n-channel MOS FET in which the power supply voltage is applied to a drain terminal and which is turned on or turned off in accordance with a gate-source voltage applied between a gate terminal and a source terminal; a boost capacitor one end of which is directly or indirectly connected with the gate terminal and another end is connected with the source terminal; comparison means for comparing a voltage in the one end of the boost capacitor with the power supply voltage; determination means for determining whether the gate-source voltage is lower than an ON voltage of the FET continuously for a predetermined time on the basis of a comparison result of the comparison means; and stop means for turning off the FET if it is determined that the gate-source voltage is lower than the ON voltage continuously for the predetermined time.SELECTED DRAWING: Figure 1
申请公布号 JP2016077108(A) 申请公布日期 2016.05.12
申请号 JP20140207050 申请日期 2014.10.08
申请人 TOSHIBA TEC CORP 发明人 SHIKAMATA MIKIHIRO
分类号 H02M3/155;H03K17/06 主分类号 H02M3/155
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