发明名称 |
SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a novel semiconductor device or a semiconductor device capable of erasing data at high speed.SOLUTION: The semiconductor device includes a plurality of circuits 21 each having a function of storing data and a wiring EL. The plurality of circuits 21 each include a first transistor 101, a second transistor 102, and a capacitor 103. One of a source and a drain of the first transistor 101 is electrically connected to a gate of the second transistor 102 and the capacitor 103. The first transistor 101 includes an oxide semiconductor in a channel formation region. The wiring EL has a function of a back-gate of the first transistor 101. A potential for selecting the plurality of circuits 21 is supplied to the wiring EL. Thus, data stored in the plurality of circuits 21 is erased.SELECTED DRAWING: Figure 2 |
申请公布号 |
JP2016076285(A) |
申请公布日期 |
2016.05.12 |
申请号 |
JP20150195582 |
申请日期 |
2015.10.01 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
YONEDA SEIICHI |
分类号 |
G11C11/405;G09G3/20;G09G3/36;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L21/8242;H01L21/8247;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L27/105;H01L27/108;H01L27/115;H01L29/417;H01L29/423;H01L29/49;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
G11C11/405 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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