| 发明名称 |
SEMICONDUCTOR DEVICE HAVING A METAL GATE |
| 摘要 |
A semiconductor device comprises a non-conductive gate feature over a substrate, and a metal gate electrode over the substrate. The metal gate electrode comprises a portion over an active region of the substrate, and a portion over an isolation feature of the substrate ending at an end cap. A vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region. |
| 申请公布号 |
US2016133693(A1) |
申请公布日期 |
2016.05.12 |
| 申请号 |
US201614990016 |
申请日期 |
2016.01.07 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Tsai Tsung-Chieh;Shih Yung-Che Albert;Ting Jyh-Kang;Wu Juing-Yi;Lee Liang-Yao |
| 分类号 |
H01L29/06;H01L29/49;H01L27/088;H01L27/092 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a non-conductive gate feature over a substrate; and a metal gate electrode over the substrate, the metal gate electrode comprising:
a portion over an active region of the substrate; anda portion over an isolation feature of the substrate ending at an end cap, wherein a vertical profile of the metal gate electrode at the end cap matches a vertical profile of the metal gate electrode in the portion over the active region. |
| 地址 |
Hsinchu TW |
