发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 A semiconductor device, includes a die pad that has a first main surface and a second main surface located on the opposite side of the first main surface; a lead arranged next to the die pad; a semiconductor chip that has a surface, a first electrode and a second electrode formed on the surface, and a reverse side located on the opposite side of the surface, and is mounted on a chip mounting area of the first main of the die pad; a first wire that electrically couples the first electrode of the semiconductor chip and the lead; a second wire that electrically couples the second electrode of the semiconductor chip and the die pad; and a sealed body that seals the semiconductor chip, the first wire, and the second wire.
申请公布号 US2016133548(A1) 申请公布日期 2016.05.12
申请号 US201614997509 申请日期 2016.01.16
申请人 Renesas Electronics Corporation 发明人 SHIMIZU Akito;NISHIKAWA Kenji;MOROI Sadayuki;lmura Tomoo
分类号 H01L23/495;H01L23/00;H01L23/31 主分类号 H01L23/495
代理机构 代理人
主权项 1. A semiconductor device, comprising: a die pad that has a first main surface and a second main surface located on an opposite side of the first main surface; a lead arranged next to the die pad; a semiconductor chip that has a surface, a first electrode and a second electrode formed on the surface, and a reverse side located on an opposite side of the surface, and is mounted on a chip mounting area of the first main surface of the die pad; a first wire that electrically couples the first electrode of the semiconductor chip and the lead; a second wire that electrically couples the second electrode of the semiconductor chip and the die pad; and a sealed body that seals the semiconductor chip, the first wire, and the second wire so that a part of the lead and the second main surface of the die pad are exposed at least partially, wherein on the second main surface of the die pad, a stepped part that ranges to a side surface of the die pad and a groove part arranged along the stepped part of the second main surface of the die pad are provided, and wherein a depth of the groove part is deeper than a depth of the stepped part in a thickness direction of the die pad.
地址 Tokyo JP