MEMORY DEVICES AND BIASING METHODS FOR MEMORY DEVICES

摘要

Methods of biasing in memory devices facilitate memory device programming operations. In at least one embodiment, a first string of memory cells comprising a selected memory cell and a second string of memory cells are coupled to a common data line and a common source, where the data line is biased to a potential greater than a potential to which the source is biased during a programming operation performed on the selected memory cell.

主权项

1. A method of operating a memory device, the method comprising:
biasing a data line to a first potential, where the data line is coupled to a first end of a first string of memory cells and to a first end of a second string of memory cells; biasing a source to a second potential, where the source is coupled to a second end of the first string of memory cells and to a second end of the second string of memory cells; deactivating a select gate coupled between the first end of the second string of memory cells and the data line by biasing a control gate of the select gate to a third potential where the first potential is greater than the third potential; and performing a programming operation on a selected memory cell of the first string of memory cells concurrently with biasing the data line to the first potential and biasing the source to the second potential and while the select gate is deactivated; wherein the first potential is greater than the second potential.