LIQUID CRYSTAL DISPLAY

摘要

A liquid crystal display includes: a gate line extending in a first direction; a first data line and a second data line extending in a second direction; a thin film transistor (TFT) including a gate electrode connected to the gate line, a source electrode connected to the first data line, and a drain electrode; a vertical storage electrode line extending between the first and second data lines; a passivation layer disposed on the TFT and the vertical storage electrode line; an insulating layer disposed on the passivation layer; and a subpixel electrode disposed on the insulating layer, connected to the drain electrode, wherein the vertical storage electrode line includes an expansion, the insulating layer includes an opening exposing a portion of the passivation layer overlapping the expansion, and wherein the subpixel electrode includes a protrusion overlapping the expansion, a reinforced storage capacitor being formed between the protrusion and the expansion.

主权项

1. A liquid crystal display, comprising:
a gate line extending in a first direction; a first data line extending in a second direction different from the first direction; a second data line extending in the second direction; a first thin film transistor comprising a first gate electrode connected to the gate line, a first source electrode connected to the first data line, and a first drain electrode; a second thin film transistor comprising a second gate electrode connected to the gate line, a second source electrode connected to the first data line, and a second drain electrode; a third thin film transistor comprising a third gate electrode connected to the gate line, a third source electrode connected to the second drain electrode, and a third drain electrode; a vertical storage electrode line extending between the first data line and the second data line, the vertical storage electrode line being connected to the third drain electrode; a passivation layer disposed on the first thin film transistor, the second thin film transistor, the third thin film transistor, and the vertical storage electrode line; is an insulating layer disposed on the passivation layer; a first subpixel electrode disposed on the insulating layer and connected to the first drain electrode; and a second subpixel electrode disposed on the insulating layer and connected to the second drain electrode, wherein the vertical storage electrode line comprises a first expansion adjacent to the gate line, wherein the insulating layer comprises a first opening exposing a portion of the passivation layer, the portion of the passivation layer overlapping the first expansion, and wherein the second subpixel electrode comprises a first protrusion overlapping the first expansion in the first opening, a reinforced storage capacitor being formed between the first protrusion and the first expansion.