| 摘要 |
A low-temperature polycrystalline silicon semiconductor thin-film transistor-based GOA circuit comprising multiple cascade GOA units. A level N GOA unit comprises a pull-up control part (100), a pull-up part (200), a first pull-down part (400), and a pull-down holding circuit part (500). The pull-down holding circuit part (500) employs a high-low potential backstepping design and is provided with consecutively lowered first, second, and third direct current constant voltage potentials (VSS1, VSS2, and VSS3) and a direct current constant voltage high potential (H). This solves an impact on a GOA driver circuit by properties of the low temperature polysilicon semiconductor thin-film transistor itself, particularly a GOA functional shortcoming brought forth by the problem of electric leakage, also solves the problem that the potential of a second node (P(N)) in the pull-down holding circuit part in an existing low-temperature polycrystalline silicon semiconductor thin-film transistor-based GOA circuit cannot remain at an increased potential during inactivity, and effectively maintains a low potential for a first node (Q(N)) and an output end (G(N)). |
