SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR

摘要

Provided are a semiconductor device capable of reducing power consumption and a production method therefor. The semiconductor device comprises: an Si (silicon) substrate; an SiC (silicon carbide) layer formed on the surface of the Si substrate; an AlN (aluminum nitride) layer formed on the surface of the SiC layer; and an n-type GaN (gallium nitride) layer formed on the surface of the AlN layer; a first electrode formed on the surface side of the GaN layer; and a second electrode formed on the rear surface side of the Si substrate 1. The size of a current flowing between the first electrode and the second electrode depends on the voltage between the first electrode and the second electrode.