发明名称 マグネトロンスパッタリングカソード及びこれを備えたスパッタリング装置並びに該スパッタリング装置を用いたスパッタリング成膜方法
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering cathode which can improve utilization efficiency of a target while suppressing variation in film thickness in sputtering deposition.SOLUTION: A magnetron sputtering cathode 10 includes a magnetic field generating mechanism which include a rectangular-ring-shaped outer magnetic pole 18 provided corresponding to a peripheral part of a ring target 11 and an inner magnetic pole 19 disposed in an inner side of the outer magnetic pole so as to extend in a short side direction of the outer magnetic pole 18. The inner magnetic pole 19 is configured by a first magnetic pole 19a and a second magnetic pole 19b which have a different pole to and the same pole of that of the outer magnetic pole 18. The first magnetic pole 19a and the second magnetic pole 19b freely reciprocates in a direction generally crossing the extending direction and in a long-side direction of the outer magnetic pole 18, and are disposed such that the first magnetic pole 19a and the second magnetic pole 19b are disposed alternatively along the reciprocation direction and both ends are the first magnetic pole 19a.
申请公布号 JP5915580(B2) 申请公布日期 2016.05.11
申请号 JP20130071985 申请日期 2013.03.29
申请人 住友金属鉱山株式会社 发明人 渡邉 寛人
分类号 C23C14/35 主分类号 C23C14/35
代理机构 代理人
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