| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor capable of forming a nitride semiconductor having excellent crystallinity with high reproducibility. <P>SOLUTION: A method of manufacturing a nitride semiconductor comprises the steps of: arranging a sapphire substrate having a c-plane as a main surface and a target containing aluminum with a distance; forming an aluminum-containing nitride intermediate layer on a surface of the sapphire substrate by the DC magnetron sputtering method performed by applying a voltage through the DC-continuous method between the sapphire substrate and the target; and forming a nitride semiconductor having the (004) plane as a main surface on the aluminum-containing nitride intermediate layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
