发明名称 |
MEMORY DEVICE WHICH CORRECTS ERROR AND METHOD OF CORRECTING ERROR |
摘要 |
A memory device according to the present invention has a memory unit and a logic control unit. The memory unit includes a data storage section divided into a plurality of correction groups for storing data including a plurality of words in each of the correction groups, and a parity storage section for storing a plurality of parities in which one parity is set to each of the correction groups. The logic control unit receives the data stored in the memory unit, detects error data including a word having a double bit error among a plurality of the words included in the data, receives the parity corresponding to the error data from the parity storage section, and detects a location of the double bit error in the word having the double bit error by performing a logic operation with respect to the error data and the parity and corrects the double bit error. |
申请公布号 |
KR20160050961(A) |
申请公布日期 |
2016.05.11 |
申请号 |
KR20140150208 |
申请日期 |
2014.10.31 |
申请人 |
SK HYNIX INC.;POSTECH ACADEMY-INDUSTRY FOUNDATION |
发明人 |
YOO, SUNG JOO;CHOI, YOUNG GEUN;LEE, SEUNG MIN;CHOI, WON HA |
分类号 |
G06F11/10;G06F12/00 |
主分类号 |
G06F11/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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