RESISTIVE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

The present disclosure relates to a resistive memory device including memory cells and an operating method thereof. The resistive memory device includes a sensing circuit which is connected to a first signal line connected to a memory cell, and senses the data of the memory cell based on a first reference current; and a reference time generator which generates a reference time signal for determining the output point of the sensing result based on the first reference current. So, current consumption can be reduced in a read-out operation process.