ETCHANT COMPOSITIONS FOR NITRIDE LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME

摘要

A nitride membrane etching composition comprises 80 to 90 wt% of phosphoric acid, 0.02 to 0.1 wt% of a silicon-fluorine compound including the coupling (Si-F bond) of silicon atoms and fluorine atoms, and a remaining amount of water. A high nitride etching ratio may be ensured by adding the silicon-fluorine compound.