| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem due to an increase in gate tunnel leakage current of an MOS in a leading-edge process for the semiconductor device requiring a standby mode at low leakage current.SOLUTION: A semiconductor integrated circuit device includes a power supply voltage control circuit for controlling the power supply voltage of a plurality of static type memory cells which is a potential difference between a power supply line and a source line. The power supply voltage control circuit controls the potential of the source line so that when first and second N channel transfer MOS transistors constituting the memory cells are in an off state, a GIDL current flowing through the first and second N channel transfer MOS transistors is smaller in a standby state than in an operating state. |
