| 摘要 |
Release of oxygen at a side surface of an island-shaped oxide semiconductor film is controlled and decrease in resistance is prevented. A semiconductor device includes an island-shaped oxide semiconductor film at least partly including a crystal, a first gate insulating film provided to cover at least a side surface of the island-shaped oxide semiconductor film, and a second gate insulating film provided to cover at least the island-shaped oxide semiconductor film and the first gate insulating film. The first gate insulating film is an insulating film that supplies oxygen to the island-shaped oxide semiconductor film, and the second gate insulating film is an insulating film which has a low oxygen-transmitting property |
