发明名称 Film formation method.
摘要 When a film containing constituent elements of a target (T) is formed on a substrate (B) through a vapor deposition process using plasma with placing the substrate (B) and the target (T) to face to each other, the film is formed with surrounding the substrate (B) with a wall surface (10S, 41S) having the constituent elements of the target (T) adhering thereto, and applying a physical treatment to the wall surface (10S, 41S) to cause the components adhering to the wall surface (10S, 41S) to be released into the film formation atmosphere.
申请公布号 EP2221395(B1) 申请公布日期 2016.05.11
申请号 EP20100152540 申请日期 2010.02.03
申请人 FUJIFILM CORPORATION 发明人 FUJII, TAKAMICHI;NAONO, TAKAYUKI
分类号 C23C14/34;B41J2/16;C23C14/08;C23C14/54 主分类号 C23C14/34
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