摘要 |
Provided are a manufacturing method of substrate grown graphene, substrate grown graphene, and an electronic part comprising the same. The manufacturing method of substrate grown graphene comprises the following steps of: a. arranging a metal layer on a substrate; b. supplying etching gas and carbon-containing gas, and conducting rapid thermal chemical vapor deposition (RTCVD); c. supplying carbon-containing gas when supplying the etching gas, and growing graphene on the metal layer; and d. continuously conducting RTCVD from the process of the step c., and growing graphene on the substrate without including the metal layer by continuously removing all of the metal in the metal layer by the etching gas. |