发明名称 メモリコントローラ、揮発性メモリの制御方法及びメモリ制御システム
摘要 The memory controller is provided with a refresh clock generation unit, a control signal generation unit, and a refresh request generation unit. The refresh clock generation unit generates a clock obtained by frequency dividing a system clock, as a refresh clock. The control signal generation unit issues a refresh command to a memory, based on the refresh clock. The refresh request generation unit curtails, based on a specified refresh count in a specified refresh period determined by the memory, a supply to the control signal generation unit of a redundant refresh clock generated exceeding the specified refresh count, the refresh clock being generated within the specified refresh period.
申请公布号 JP5917307(B2) 申请公布日期 2016.05.11
申请号 JP20120132232 申请日期 2012.06.11
申请人 ルネサスエレクトロニクス株式会社 发明人 松本 隆幸
分类号 G11C11/406 主分类号 G11C11/406
代理机构 代理人
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