发明名称 |
Graphene base transistor having compositionally-graded collector barrier layer |
摘要 |
Junction transistor, comprising, on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer, characterized in that the collector barrier layer is a compositionally graded material layer, which has an electron affinity that decreases in a direction pointing from the base layer to the collector layer. |
申请公布号 |
EP2525409(B1) |
申请公布日期 |
2016.05.11 |
申请号 |
EP20110190486 |
申请日期 |
2011.11.24 |
申请人 |
IHP GMBH-INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS / LEIBNIZ-INSTITUT FÜR INNOVATIVE MIKROELEKTRONIK |
发明人 |
DABROWSKI, JAREK;MEHR, WOLFGANG;SCHEYTT, CHRISTOPH;LUPINA, GRZEGORZ |
分类号 |
H01L29/737;H01L29/08;H01L29/10;H01L29/16;H01L29/76 |
主分类号 |
H01L29/737 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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