| 摘要 |
Provided is a metal film formation method capable of forming a high-throughput metal film with less impurities by chemical vapor deposition (CVD). The first process of the method includes arranging a processed substrate in a treatment basin; supplying deposition materials consisting of metal-containing compounds having a ligand with a nitrogen-carbon bond in the molecular structure and a structure that nitrogen in the ligand is coordinated on a metal, and a reductive gas consisting of at least one kind selected from ammonia, hydrazine, and derivatives thereof, to the processed substrate to form an initial metal film by CVD. The second process includes supplying the hydrogen gas to the treatment basin to conduct hydrogen treatment to the processed substrate. The third process includes supplying deposition materials consisting of metal-containing compounds identical to the first process and a reductive gas consisting of the hydrogen gas to the initial metal film formed on the processed substrate to form a main metal film by CVD. [Reference numerals] (AA) Nickel amidinate; (BB) Purge; (CC) Step 1 - Initial film formation; (DD) Step 2 - Hydrogen treatment; (EE) Step 3 - Major film formation; (FF) Step 4 - Purge |
