| 摘要 |
A method of operating a memory device is disclosed, wherein the memory device includes an n-type substrate (202) and a plurality of memory cells formed thereon, each memory cell corresponding to a word line (218), a first bit line (204), and second bit line (206), and including a first bit portion and a second bit portion each for storing one bit of information. The method includes erasing a selected memory cell by applying a first negative bias to the word line of the selected memory cell and applying a ground bias to the first and second bit lines, and programming the first bit portion of the selected memory cell by applying a first positive bias to the word line of the selected memory cell, applying a second negative bias to the first bit line of the selected memory cell, and applying a ground bias to the second bit line of the selected memory cell. |
