| 摘要 |
An embodiment includes: a step of growing a single crystal ingot; a step of processing the grown single crystal ingot as a semiconductor substrate; a thermal treatment step of removing a thermal doner in the semiconductor substrate, generated at the single crystal ingot growth step, while forming an oxide film on the semiconductor substrate by thermally treating the substrate; and a step of measuring the resistivity of the semiconductor substrate after the completion of the thermal treatment. The thermal treatment step includes first to nth thermal treatment sections. Thermal treatment temperatures of the first to nth thermal treatment sections are different from each other, the thermal treatment temperature of the first thermal treatment section is not lower than 600°C, and the thermal treatment temperature of the k(2<=k<=n)th thermal treatment section is higher than the thermal treatment temperature of the k-1th thermal treatment section. |
