| 摘要 |
The present invention is a method for producing a sapphire single crystal by a CZ method in such a manner that a seed crystal is dipped in a melt that is produced by heating and melting a raw material in a crucible containing tungsten or molybdenum or both of tungsten and molybdenum as the main component or components using a resistance heating heater and then is pulled up from the melt, wherein a polished seed crystal is used as the seed crystal to be dipped in the melt. It becomes possible to provide a method for producing a sapphire single crystal using an apparatus equipped with a resistance heating heater, in which a seed crystal can be seeded satisfactorily in such a manner that the side surface or the like of the seed crystal cannot be melted. |
