| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce an area of a memory cell of a resistance change type nonvolatile memory, and to reduce power consumption. <P>SOLUTION: For the resistance change type nonvolatile memory, a terminal of a memory cell of a circuit in which a transistor for memory cell selection for which a row selection line is connected to a gate terminal and a resistance change type element are connected in series is connected to a bit line and a source line. The source line of the resistance change type nonvolatile memory is wired in parallel with the row selection line, and the bit line is wired orthogonally to the row selection line. A source voltage of a fixed value is applied to the source line to write and read data to/from the memory cell, and by switching a voltage higher than the source voltage and a voltage lower than that and applying them to the bit line, the data of different values are written to the memory cell. <P>COPYRIGHT: (C)2013,JPO&INPIT |
