半導体装置

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that is not only fast/low loss, but also enhanced in breakdown voltage and short-circuit resistance performance to have softer switching characteristics.

SOLUTION: A gate insulating film 11 of the semiconductor device 100 includes a first gate insulating film 11a in contact with at least part of a P+base layer 4, and a second gate insulating film 11b in contact with at least part of an N-drift layer 1, wherein the second gate insulating film 11b is large in thickness than the first gate insulating film 11a and protrudes more than the first gate insulating film 11a in a direction parallel with a first principal surface of the semiconductor device 100. Further, a distance from an interface between the N-drift layer 1 and P+base layer 4 to a boundary between the first gate insulating film 11a and second gate insulating film 11b is 2 to 5 μm.

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