RESISTIVE MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

The present disclosure relates to a method for operating a memory device including memory cells arranged in each of regions where a plurality of first signal lines and a plurality of second signal lines intersect. The method includes a step of applying a first voltage to a first signal line connected to a selected memory cell, in a first set writing region, and applying a second voltage lower than the first voltage to a second signal line, thereby applying a first writing voltage to the selected memory cell; and a step of applying a third voltage which is lower than the first voltage and higher than the second voltage to the first signal line, in a second set writing range, thereby applying a second writing voltage to the selected memory cell. So, the durability of the memory device can be improved.