发明名称 |
SILICON SINGLE CRYSTAL GROWING METHOD |
摘要 |
A silicon single crystal is produced by the CZ process by setting a hydrogen partial pressure in an inert atmosphere within a growing apparatus to 40 Pa or more but 400 Pa or less, and by growing a body portion of the silicon single crystal as a defect-free area free from the Grown-in defects. Therefore, a wafer which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily produced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits. |
申请公布号 |
EP1892323(B1) |
申请公布日期 |
2016.05.11 |
申请号 |
EP20050783521 |
申请日期 |
2005.09.14 |
申请人 |
SUMCO CORPORATION |
发明人 |
ONO, TOSHIAKI;SUGIMURA, WATARU;HOURAI, MASATAKA |
分类号 |
C30B15/04;C30B15/20;C30B29/06;H01L21/322 |
主分类号 |
C30B15/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|