| 摘要 |
Provided is a magnetoresistive device realizing low power consumption and improved stability. The magnetoresistive device comprises: a fixed layer of which a specific magnetization direction is fixed; a free layer of which a magnetization direction is varied; and an insulation layer provided between the fixed layer and the free layer, wherein the fixed layer, the free layer and the insulation layer form a magnetic tunnel junction layer. The free layer includes a first magnetic layer and a second magnetic layer having a curie temperature lower than the first magnetic layer. The curie temperature of the second magnetic layer is set to a temperature lower than the curie temperature of the first magnetic layer, thereby amount of current inverting a magnetization direction of the first magnetic layer in writing task can be reduced. |
