Semiconductor memory device employing a ferromagnetic gate

摘要

A semiconductor memory device including a channel region and a ferromagnetic gate is provided. The channel region can be formed within a semiconductor nanowire. The ferromagnetic gate is programmed with a selected orientation of magnetization by the electrical current that passes through the channel region in one direction or another. The orientation of the magnetization in the ferromagnetic gate can be detected by changes in the threshold voltage of a field effect transistor employing the ferromagnetic gate as a gate electrode, or can be detected by the resistance of the channel region that changes with the orientation of the magnetization in a two terminal device.

主权项

1. A semiconductor structure comprising:
a semiconductor nanowire located on a substrate and including a channel region; an upper dielectric material portion located on a top surface of said channel region; a lower dielectric material portion located underneath a bottom surface of said channel region; a gate dielectric contacting said channel region, said upper dielectric material portion, and said lower dielectric material portion; and a ferromagnetic gate structure located on said gate dielectric, wherein said semiconductor nanowire further includes: a source region contacting a sidewall of said channel region; and a drain region contacting another sidewall of said channel region, and wherein said channel region has a doping of a first conductivity type at a first dopant concentration, said source region has a doping of a second conductivity type at a second dopant concentration that is greater than said first dopant concentration, and said drain region includes dopants at a third concentration that is greater than said first concentration, wherein said second conductivity type is the opposite of said first conductivity type.