Semiconductor device and method of making semiconductor device

摘要

One or more embodiments are related to a semiconductor device, comprising: a high-K dielectric material; and a nitrogen-doped silicon material disposed over said high-k dielectric material.

主权项

1. A semiconductor memory device, comprising:
a semiconductor substrate; a first dielectric layer disposed over said semiconductor substrate; a first conductive layer disposed over said first dielectric layer; a high-k dielectric layer disposed over said first conductive layer; a nitrogen-doped silicon material disposed over and in direct contact with said high-k dielectric layer, wherein the high-k dielectric layer and the nitrogen-doped silicon material comprise different compositions; and a second conductive layer disposed over and in direct contact with said nitrogen-doped silicon material, wherein the high-k dielectric layer and the nitrogen-doped silicon material are disposed between the first conductive layer and the second conductive layer.