Photoelectric conversion element and imaging device

摘要

A photoelectric conversion element is formed by laminating, in order, a substrate, a lower electrode, an organic layer which generates electric charge by light irradiation, an upper electrode which transmits light, a buffer layer and a protective film. The buffer layer is formed from hydrogenated silicon oxide containing hydrogen ions, and has a thickness of 1 to 100 nm. The protective film contains hydrogenated silicon nitride containing hydrogen ions or hydrogenated silicon oxynitride containing hydrogen ions and has a thickness of 30 to 500 nm.

主权项

1. A photoelectric conversion element comprising:
a substrate; a lower electrode formed on the substrate; an organic layer formed on the lower electrode and adapted to generate electric charges in response to irradiation with light; an upper electrode formed on the organic layer and adapted to transmit the light; a buffer layer formed on the upper electrode; and a protective film formed on the buffer layer, wherein the buffer layer is composed of hydrogenated silicon oxide having a hydrogen ion content of 10 atm % to 40 atm % and has a thickness of 1 nm to 100 nm; and wherein the protective film is composed of hydrogenated silicon nitride containing hydrogen ions or hydrogenated silicon oxynitride containing hydrogen ions and has a thickness of 30 nm to 500 nm.